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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2000    内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Tunable MQW-DBR lasers using selective area growth 会议论文 4th international conference on thin film physics and applications, shanghai, peoples r china, may 08-11, 2000 Liu GL; Wang W; Zhang JY; Chen WX; Xu GY; Zhang BJ; Zhou F; Wang XJ; Zhu HL 收藏  |  浏览/下载：7/0  |  提交时间：2010/10/29 selective area growth  multi-quantum-well  distributed Bragg reflector laser  MOCVD  tunable laser  EPITAXY   Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission 会议论文 conference on optical interconnects for telecommunication and data communications, beijing, peoples r china, nov 08-10, 2000 Liu GL; Wang W; Zhang BJ; Chen WX; Zhou F; Zhang JY; Wang XJ; Zhu HL 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 MOVPE  selective-area-growth  electroabsorption modulator  distributed feedback laser  ridge waveguide  high-speed digital modulation  optical transmission  LIGHT-SOURCE  DBR LASER  MQW   Electronic characteristics of InAs self-assembled quantum dots 会议论文 9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY   Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文 international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999 作者:  Yu F 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 solid phase epitaxy  silicon on sapphire (SOS)  carrier mobility   Self-assembled InAs quantum wires on InP(001) 会议论文 11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000 作者:  Xu B 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 SHORT-PERIOD SUPERLATTICES  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  STATE