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科研机构
半导体研究所 [29]
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期刊论文 [24]
会议论文 [5]
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2020 [1]
2019 [1]
2011 [1]
2009 [7]
2008 [4]
2006 [6]
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半导体材料 [9]
半导体物理 [9]
光电子学 [5]
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Computational prediction of a novel 1D InSeI nanochain with high stability and promising wide-bandgap properties
期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 卷号: 22, 期号: 46, 页码: 27441-27449
作者:
Shujuan Jiang
;
Huabing Yin
;
Guang-Ping Zheng
;
Bing Wang
;
Shan Guan
;
Bing-Jian Yao
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/05/21
Direct Wide Bandgap 2D GeSe 2 Monolayer toward Anisotropic UV Photodetection
期刊论文
Advanced Optical Materials, 2019, 卷号: 7, 期号: 19, 页码: 1900622
作者:
Yong Yan
;
Wenqi Xiong
;
Shasha Li
;
Kai Zhao
;
Xiaoting Wang
;
Jian Su
;
Xiaohui Song
;
Xueping Li
;
Shuai Zhang
;
Huai Yang
;
Xinfeng Liu
;
Lang Jiang
;
Tianyou Zhai
;
Congxin Xia
;
Jingbo Li
;
Zhongming Wei
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2020/08/03
Power splitter based on photonic crystal waveguides with an air holes array
期刊论文
Optical engineering, 2011, 卷号: 50, 期号: 11, 页码: 4
作者:
Yu, Tianbao
;
He, Lingjuan
;
Deng, Xinhua
;
Fang, Liguang
;
Liu, Nianhua
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/05/12
Photonic bandgap
Beam splitter
Cutoff frequency
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
收藏
  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:
Wei HY
;
Jiao CM
;
Song HP
收藏
  |  
浏览/下载:236/41
  |  
提交时间:2010/03/08
aluminium compounds
conduction bands
energy gap
high electron mobility transistors
III-V semiconductors
magnesium compounds
passivation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105
作者:
Zhang XW
;
Yin ZG
;
You JB
收藏
  |  
浏览/下载:100/13
  |  
提交时间:2010/03/08
atomic force microscopy
field emission
hydrogen
II-VI semiconductors
plasma materials processing
sputter deposition
wide band gap semiconductors
work function
zinc compounds
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:310/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:
Yang H
;
Wang H
;
Wang H
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:64/1
  |  
提交时间:2010/03/08
edge dislocations
gallium compounds
III-V semiconductors
impurities
photoluminescence
semiconductor doping
semiconductor thin films
silicon
wide band gap semiconductors
X-ray diffraction
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