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科研机构
半导体研究所 [43]
内容类型
期刊论文 [43]
发表日期
2013 [1]
2011 [6]
2010 [8]
2009 [13]
2008 [5]
2006 [3]
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学科主题
半导体材料 [13]
半导体物理 [8]
光电子学 [6]
半导体化学 [1]
半导体器件 [1]
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19μm quantum cascade infrared photodetectors
期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 191120 - 191120-4
作者:
Zhai, Shen-Qiang
;
Liu, Jun-Qi
;
Wang, Xue-Jiao
;
Zhuo, Ning
;
Liu, Feng-Qi
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2014/02/12
Aluminium Compounds
Gallium Compounds
Iii-v Semiconductors
Indium Compounds
Infrared Detectors
Leakage Currents
Photodetectors
Photodetectors
Bolometers
Infrared Submillimeter Wave microWave And radioWave Receivers And Detectors
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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  |  
浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
期刊论文
ieee international conference on group iv photonics gfp, 2011, 页码: 314-316
Hu, Weixuan
;
Cheng, Buwen
;
Xue, Chunlai
;
Su, Shaojian
;
Liu, Zhi
;
Li, Yaming
;
Wang, Qiming
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  |  
浏览/下载:49/0
  |  
提交时间:2012/06/13
Epitaxial growth
Germanium
Indium
Photonics
Semiconducting silicon compounds
Silicon
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
;
Song, Guofeng
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:33/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating
期刊论文
Applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: 3
作者:
Cao, Yu-Lian
;
Yang, Tao
;
Xu, Peng-Fei
;
Ji, Hai-Ming
;
Gu, Yong-Xian
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/05/12
Excited states
Gallium arsenide
Iii-v semiconductors
Indium compounds
Laser tuning
Optical films
Quantum dot lasers
Silicon compounds
Tantalum compounds
Self-heating effect in 1.3 mu m p-doped inas/gaas quantum dot vertical cavity surface emitting lasers
期刊论文
Journal of applied physics, 2010, 卷号: 107, 期号: 6, 页码: 6
作者:
Xu, D. W.
;
Tong, C. Z.
;
Yoon, S. F.
;
Zhao, L. J.
;
Ding, Y.
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  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
Gallium arsenide
Iii-v semiconductors
Indium compounds
Quantum dot lasers
Surface emitting lasers
Optically controlled quantum dot gated transistors with high on/off ratio
期刊论文
Applied physics letters, 2010, 卷号: 96, 期号: 8, 页码: 3
作者:
Yang, Xiaohong
;
Xu, Xiulai
;
Wang, Xiuping
;
Ni, Haiqiao
;
Han, Qin
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Iii-v semiconductors
Indium compounds
Laser beam applications
Nanoelectronics
Photoelectric devices
Photoelectricity
Phototransistors
Semiconductor quantum dots
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