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Low temperature characteristics of algan/gan high electron mobility transistors 期刊论文
European physical journal-applied physics, 2011, 卷号: 56, 期号: 1, 页码: 4
作者:  Lin, D. F.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Qiang, L. J.
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Growth simulations of self-assembled nanowires on stepped substrates 期刊论文
Ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
作者:  Liang, Song;  Kong, Duanhua;  Zhu, Hongliang;  Wang, Wei
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Anomalous shift of the beating nodes in illumination-controlled in1-xgaxas/in1-yalyas two-dimensional electron gases with strong spin-orbit interaction 期刊论文
Physical review b, 2010, 卷号: 81, 期号: 19, 页码: 6
作者:  Zhou, W. Z.;  Lin, T.;  Shang, L. Y.;  Yu, G.;  Gao, K. H.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Theoretical gain of strained gesn0.02/ge1-x-y ' sixsny ' quantum well laser 期刊论文
Journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: 8
作者:  Zhu, Yuan-Hui;  Xu, Qiang;  Fan, Wei-Jun;  Wang, Jian-Wei
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: art. no. 073108
Zhu YH (Zhu Yuan-Hui); Xu Q (Xu Qiang); Fan WJ (Fan Wei-Jun); Wang JW (Wang Jian-Wei)
收藏  |  浏览/下载：67/3  |  提交时间：2010/05/07
ALLOYS  GE  
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction 期刊论文
physical review b, 2010, 卷号: 81, 期号: 19, 页码: art. no. 195312
Zhou WZ (Zhou W. Z.); Lin T (Lin T.); Shang LY (Shang L. Y.); Yu G (Yu G.); Gao KH (Gao K. H.); Zhou YM (Zhou Y. M.); Wei LM (Wei L. M.); Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.)
收藏  |  浏览/下载：190/33  |  提交时间：2010/06/18
A new p-n structure ultraviolet photodetector with p(-)-gan active region 期刊论文
Acta physica sinica, 2009, 卷号: 58, 期号: 10, 页码: 7255-7260
作者:  Zhou Mei;  Zhao De-Gang
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
A new p-n structure ultraviolet photodetector with p(-)-GaN active region 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 10, 页码: 7255-7260
Zhou M (Zhou Mei); Zhao DG (Zhao De-Gang)
收藏  |  浏览/下载：188/83  |  提交时间：2010/03/08
Properties of alyga1-yn/alxga1-xn/aln/gan double-barrier high electron mobility transistor structure 期刊论文
Chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: 4
作者:  Guo Lun-Chun;  Wang Xiao-Liang;  Xiao Hong-Ling;  Ran Jun-Xue;  Wang Cui-Mei
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12

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