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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Gaas-based long-wavelength inas quantum dots on multi-step-graded ingaas metamorphic buffer grown by molecular beam epitaxy 期刊论文 Journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 5 作者:  He Ji-Fang;  Wang Hai-Li;  Shang Xiang-Jun;  Li Mi-Feng;  Zhu Yan 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102 He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC 收藏  |  浏览/下载：24/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE   Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition 期刊论文 Surface & coatings technology, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456 作者:  Fan, Y. M.;  Zhang, X. W.;  You, J. B.;  Tan, H. R.;  Chen, N. F. 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Cubic boron nitride  Stress relaxation  Ion beam assisted deposition  Fourier transformed infrared spectroscopy   AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Liu, NX; Yan, JC; Liu, Z; Ma, P; Wang, JX; Li, JM 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 AlGaN  HT-AlGaN buffer  HT-interlayers  ultraviolet (UV) LED   Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299 Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD 收藏  |  浏览/下载：67/3  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  TEMPERATURE ALN INTERLAYERS  PHASE EPITAXY  OPTICAL-PROPERTIES  SURFACTANT  SUBSTRATE  STRESS  SI  REDUCTION  SAPPHIRE   Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition 期刊论文 journal of applied physics, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764 作者:  Zhang SM;  Zhao DG 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  NITRIDE SEMICONDUCTORS  STRESS