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Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
作者:  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
收藏  |  浏览/下载：28/0  |  提交时间：2019/11/15
A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文
Science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005
作者:  Huang TianMao;  Chen NuoFu;  Zhang XingWang;  Bai YiMing;  Yin ZhiGang
收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12
Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy 期刊论文
Journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Li, Yanbo
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005
Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi)
收藏  |  浏览/下载：25/0  |  提交时间：2010/11/14
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：91/41  |  提交时间：2010/03/08
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 5, 页码: art. no. 052108
作者:  Zhang XH
收藏  |  浏览/下载：78/1  |  提交时间：2010/03/08
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG
收藏  |  浏览/下载：29/0  |  提交时间：2010/03/09

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