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Stability of the positively charged manganese centre in gaas heterostructures examined theoretically by the effective mass approximation calculation near the gamma critical point 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 8
作者:  Wang Li-Guo;  Shen Chao;  Zheng Hou-Zhi;  Zhu Hui;  Zhao Jian-Hua
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 4
作者:  Ma Zhi-Hua;  Cao Quan;  Zuo Yu-Hua;  Zheng Jun;  Xue Chun-Lai
收藏  |  浏览/下载：36/0  |  提交时间：2019/05/12
Electrical transport properties of the si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: 5
作者:  Ying, J.;  Zhang, X. W.;  Yin, Z. G.;  Tan, H. R.;  Zhang, S. G.
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Band crossing in isovalent semiconductor alloys with large size mismatch: first-principles calculations of the electronic structure of bi and n incorporated gaas 期刊论文
Physical review b, 2010, 卷号: 82, 期号: 19, 页码: 4
作者:  Deng, Hui-Xiong;  Li, Jingbo;  Li, Shu-Shen;  Peng, Haowei;  Xia, Jian-Bai
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as 期刊论文
Physical review b, 2010, 卷号: 82, 期号: 12, 页码: 6
作者:  Misuraca, Jennifer;  Trbovic, Jelena;  Lu, Jun;  Zhao, Jianhua;  Ohno, Yuzo
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films 期刊论文
Applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
作者:  Liu, B.;  Zhang, Z.;  Zhang, R.;  Fu, D. Y.;  Xie, Z. L.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Band-tail shape and transport near the metal-insulator transition in Si-doped 期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202
Misuraca J (Misuraca Jennifer); Trbovic J (Trbovic Jelena); Lu J (Lu Jun); Zhao JH (Zhao Jianhua); Ohno Y (Ohno Yuzo); Ohno H (Ohno Hideo); Xiong P (Xiong Peng); von Molnar S (von Molnar Stephan)
收藏  |  浏览/下载：26/0  |  提交时间：2010/10/11
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：48/0  |  提交时间：2010/12/27

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