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科研机构
半导体研究所 [67]
内容类型
期刊论文 [61]
会议论文 [6]
发表日期
2011 [5]
2010 [6]
2008 [6]
2007 [4]
2006 [8]
2005 [5]
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半导体材料 [28]
半导体物理 [6]
光电子学 [4]
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Surface characterization of algan grown on si (111) substrates
期刊论文
Journal of crystal growth, 2011, 卷号: 331, 期号: 1, 页码: 29-32
作者:
Pan, Xu
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Wang, Cuimei
;
Feng, Chun
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2019/05/12
Island nucleation
Raman scattering
Si (111) substrate
Algan epilayers
Vi/ii ratio-dependent growth and photoluminescence of cubic cdse epilayers by molecular beam epitaxy
期刊论文
Journal of crystal growth, 2011, 卷号: 329, 期号: 1, 页码: 1-5
作者:
Zhao, Jie
;
Zeng, Yiping
;
Yang, Qiumin
;
Li, Yiyang
;
Cui, Lijie
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/05/12
Reflection high-energy electron diffraction
X-ray diffraction
Atomic force microscopy
Molecular beam epitaxy
Cadmium compounds
Semiconducting ii-vi materials
Growth and annealing of zinc-blende cdse thin films on gaas (001) by molecular beam epitaxy
期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
作者:
Yang, Qiumin
;
Zhao, Jie
;
Guan, Min
;
Liu, Chao
;
Cui, Lijie
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/05/12
Cdse
Molecular beam epitaxy
Reflection high energy electron diffraction
X-ray diffraction
Atomic force microscopy
Investigation of structural and optical anisotropy of m-plane inn films grown on gamma-lialo2(100) by metal organic chemical vapour deposition
期刊论文
Journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 5
作者:
Fu, D.
;
Zhang, R.
;
Liu, B.
;
Xie, Z. L.
;
Xiu, X. Q.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:35/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Preparation and optical performance of freestanding gan thick films
期刊论文
Rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:
Hu Qiang
;
Wei Tongbo
;
Duan Ruifei
;
Yang Jiankun
;
Huo Ziqiang
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/05/12
Gan
Hvpe
Freestanding thick films
Stress release
Photoluminescence
Optimization of vi/ii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy
期刊论文
Applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
作者:
Zhao, Jie
;
Zeng, Yiping
;
Liu, Chao
;
Cui, Lijie
;
Li, Yanbo
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Znte
Molecular beam epitaxy
Reflection high-energy electron diffraction
X-ray diffraction
Atomic force microscopy
Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy
期刊论文
Journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
作者:
Zhao, Jie
;
Zeng, Yiping
;
Liu, Chao
;
Li, Yanbo
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/05/12
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting ii-vi materials
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
期刊论文
applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Cui LJ (Cui Lijie)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:158/17
  |  
提交时间:2010/07/05
ZnTe
Molecular beam epitaxy
Reflection high-energy electron diffraction
X-ray diffraction
Atomic force microscopy
VAPOR-PHASE EPITAXY
N-TYPE ZNTE
MBE GROWTH
100 GAAS
ZNSE
LAYERS
SURFACE
TEMPERATURE
SUBSTRATE
EPILAYERS
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
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