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	Surface characterization of algan grown on si (111) substrates
	Pan, Xu1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2,3; Wang, Cuimei1,2,3; Feng, Chun1,2,3; Jiang, Lijuan1,2,3; Yin, Haibo1,2,3; Chen, Hong1,2,3
刊名	Journal of crystal growth
	2011-09-15
卷号	331期号:1页码:29-32
关键词	Island nucleation Raman scattering Si (111) substrate Algan epilayers
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2011.07.011
通讯作者	Pan, xu(xpan@semi.ac.cn)
英文摘要	Up to 500 nm thick crack-free al0.25ga0.75n and al0.32ga0.68n epilayers have been grown on si (111) substrates. the surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (sem). pits and shale-like surface structure have been observed. xrd rocking curve measurements indicate the crystal quality of samples. the analyses show that the al source flux is an important factor in growing algan on si (111). the information from the micro-raman spectra supported that al atoms are gathered at nearby areas of the pits originated from the aln/si (111) interface in the initial stage of algan growth. crown copyright (c) 2011 published by elsevier b.v. all rights reserved.
WOS关键词	MOLECULAR-BEAM EPITAXY ; FIELD-EFFECT TRANSISTORS ; VAPOR-PHASE EPITAXY ; GROUP-III NITRIDES ; INVERSION DOMAINS ; HIGH-TEMPERATURE ; GAN ; SI(111) ; ALN ; SAPPHIRE
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000295067900007
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428294
专题	半导体研究所
通讯作者	Pan, Xu
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Surface characterization of algan grown on si (111) substrates[J]. Journal of crystal growth,2011,331(1):29-32.
APA	Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Feng, Chun.,...&Chen, Hong.(2011).Surface characterization of algan grown on si (111) substrates.Journal of crystal growth,331(1),29-32.
MLA	Pan, Xu,et al."Surface characterization of algan grown on si (111) substrates".Journal of crystal growth 331.1(2011):29-32.

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