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CORC

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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 4, 页码: 044507
Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG
收藏  |  浏览/下载：17/0  |  提交时间：2015/03/19
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2013/09/17
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 434
Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：17/0  |  提交时间：2013/04/02
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 11, 页码: 113501
Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：8/0  |  提交时间：2013/03/27
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:  Wei HY;  Jiao CM;  Song HP
收藏  |  浏览/下载：237/41  |  提交时间：2010/03/08
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11

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