Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

	Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
	Lv YJ (Lv, Yuanjie) ; Lin ZJ (Lin, Zhaojun) ; Meng LG (Meng, Lingguo) ; Luan CB (Luan, Chongbiao) ; Cao ZF (Cao, Zhifang) ; Yu YX (Yu, Yingxia) ; Feng ZH (Feng, Zhihong) ; Wang ZG (Wang, Zhanguo)
刊名	nanoscale research letters
	2012
卷号	7 页码:434
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23849]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Lv YJ ,Lin ZJ ,Meng LG ,et al. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. nanoscale research letters,2012,7:434.
APA	Lv YJ .,Lin ZJ .,Meng LG .,Luan CB .,Cao ZF .,...&Wang ZG .(2012).Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.nanoscale research letters,7,434.
MLA	Lv YJ ,et al."Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors".nanoscale research letters 7(2012):434.