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CORC

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High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018
作者:  Zhu, Guangrun;  Gao, Hongwei(高宏伟);  Sun, Qian(孙钱);  Chen, Tangsheng;  Yang, Hui(杨辉)
收藏  |  浏览/下载：85/0  |  提交时间：2019/03/27
10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current 期刊论文
ELECTRONICS LETTERS, 2018
作者:  Wang, Qilong;  Zhang, Bingliang;  Du, Zhongkai;  Zhao, Jie(赵杰);  Chen, Fu(陈扶)
收藏  |  浏览/下载：87/0  |  提交时间：2019/03/27
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors 期刊论文
APPLIED PHYSICS LETTERS, 2018
作者:  Ding, Xiaoyu;  Yu, Guohao;  Cheng, Kai;  Cai, Yong;  Zhang, Baoshun(张宝顺)
收藏  |  浏览/下载：31/0  |  提交时间：2019/03/27
Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 119, 期号: 7
作者:  Ma, ZY;  Wang, W;  Yang, HF;  Jiang, XF;  Yu, J
收藏  |  浏览/下载：28/0  |  提交时间：2017/03/11
AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 108, 期号: 1
作者:  Sun, SC;  Fu, K(付凯);  Yu, GH(于国浩);  Zhang, ZL;  Song, L
收藏  |  浏览/下载：36/0  |  提交时间：2017/03/11
Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers 期刊论文
DIAMOND AND RELATED MATERIALS, 2016, 卷号: 69
作者:  Wang, W;  Fu, K(付凯);  Hu, C;  Li, FN;  Liu, ZC
收藏  |  浏览/下载：21/0  |  提交时间：2017/03/11
Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 15
作者:  Hao, RH;  Fu, K(付凯);  Yu, GH(于国浩);  Li, WY;  Yuan, J
收藏  |  浏览/下载：44/0  |  提交时间：2017/03/11
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016, 卷号: 37, 期号: 3
作者:  Hua, MY;  Lu, YY;  Liu, SH;  Liu, C;  Fu, K(付凯)
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 2
作者:  Zhang, ZL(张志利);  Yu, GH(于国浩);  Zhang, XD(张晓东);  Deng, XG(邓旭光);  Li, SM(李水明)
收藏  |  浏览/下载：38/0  |  提交时间：2017/03/11
Printable poly(methylsilsesquioxane) dielectric ink and its application in solution processed metal oxide thin-film transistors 期刊论文
RSC ADVANCES, 2015, 卷号: 5, 期号: 27, 页码: 7
作者:  Wu, XZ(吴馨洲);  Chen, Z(陈征);  Zhou, T(周腾);  Shao, SS(邵霜霜);  Xie, ML(谢美兰)
收藏  |  浏览/下载：23/0  |  提交时间：2015/12/31

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