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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE 其他 2016-01-01 Di, Shaoyan; Zhao, Kai; Lu, Tiao; Du, Gang; Liu, Xiaoyan 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Transient simulation  Boltzmann transport equation  Transient relaxation time  UTBB MOSFETs  BOLTZMANN TRANSPORT-EQUATION  QUASI-BALLISTIC TRANSPORT  SEMICONDUCTOR-DEVICES  SPHERICAL-HARMONICS  SCATTERING  MOSFETS   A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory 期刊论文 SCIENCE CHINA-INFORMATION SCIENCES, 2016 Lun, Zhiyuan; Du, Gang; Zhao, Kai; Liu, Xiaoyan; Wang, Yi 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 charge trapping memory  semiconductor device modeling  2-D charge transport  3-D NAND flash  device modeling and simulation  DEVICES  RETENTION  IMPACT   Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress 期刊论文 CHINESE PHYSICS B, 2016 Zhang, Li-Zhong; Wang, Yuan; He, Yan-Dong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 electrostatic discharge (ESD)  diode-triggered silicon controlled rectifier (DTSCR)  transmission-line-pulsing (TLP)  mathematical modeling  ESD PROTECTION   Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress 期刊论文 Chinese Physics. B, 2016 Zhang Lizhong; Wang Yuan; He Yandong 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 electrostatic discharge (ESD)  diode-triggered silicon controlled rectifier (DTSCR)  transmissionline-pulsing (TLP)  mathematical modeling   A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory 期刊论文 Science China. Information Science, 2016 Lun Zhiyuan; Du Gang; Zhao Kai; Liu Xiaoyan; Wang Yi 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 charge trapping memory  semiconductor device modeling  2-D charge transport  3-D NAND flash  device modeling and simulation   A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory 期刊论文 Science China(Information Sciences), 2016 Zhiyuan LUN; Gang DU; Kai ZHAO; Xiaoyan LIU; Yi WANG 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 charge trapping memory  semiconductor device modeling  2-D charge transport  3-D NAND flash  device modeling and simulation   Two-dimensional Self-limiting Oxidation for Non-planar Silicon Nano-devices from Top-down Approach: Experiments and Modeling 其他 2012-01-01 Fan, Jiewen; Xu, Qiumin; Jiang, Zizhen; Ai, Yujie; Wang, Runsheng; Huang, Ru 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 THERMAL-OXIDATION  NANOWIRES  SI