CORC  > 北京大学  > 信息科学技术学院
A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory
Lun, Zhiyuan ; Du, Gang ; Zhao, Kai ; Liu, Xiaoyan ; Wang, Yi
刊名SCIENCE CHINA-INFORMATION SCIENCES
2016
关键词charge trapping memory semiconductor device modeling 2-D charge transport 3-D NAND flash device modeling and simulation DEVICES RETENTION IMPACT
DOI10.1007/s11432-015-5475-7
英文摘要This work presents a self-consistent two-dimensional (2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the tunneling process, charge trapping/de-trapping mechanisms, and 2-D drift-diffusion transport within the storage layer. A string of three memory cells has been simulated and evaluated for different gate stack compositions and temperatures. The simulator is able to describe the charge transport behavior along bitline and tunneling directions under different operations. Good agreement has been made with experimental data, which hence validates the implemented physical models and altogether confirms the simulation as a valuable tool for evaluating the characteristics of three-dimensional NAND flash memory.; National Natural Science Foundation of China [91230107]; National Basic Research Program of China (973) [2013CBA01604]; National High Technology Research and Development Program of China (863) [2015AA016501]; SCI(E); EI; ARTICLE; gangdu@pku.edu.cn; 12; 59
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/449952]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Lun, Zhiyuan,Du, Gang,Zhao, Kai,et al. A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory[J]. SCIENCE CHINA-INFORMATION SCIENCES,2016.
APA Lun, Zhiyuan,Du, Gang,Zhao, Kai,Liu, Xiaoyan,&Wang, Yi.(2016).A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory.SCIENCE CHINA-INFORMATION SCIENCES.
MLA Lun, Zhiyuan,et al."A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory".SCIENCE CHINA-INFORMATION SCIENCES (2016).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace