A two-dimensional simulation method for investigating charge transport   behavior in 3-D charge trapping memory

doi:10.1007/s11432-015-5475-7

CORC > 北京大学 > 信息科学技术学院

	A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory
	Lun, Zhiyuan ; Du, Gang ; Zhao, Kai ; Liu, Xiaoyan ; Wang, Yi
刊名	SCIENCE CHINA-INFORMATION SCIENCES
	2016
关键词	charge trapping memory semiconductor device modeling 2-D charge transport 3-D NAND flash device modeling and simulation DEVICES RETENTION IMPACT
DOI	10.1007/s11432-015-5475-7
英文摘要	This work presents a self-consistent two-dimensional (2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the tunneling process, charge trapping/de-trapping mechanisms, and 2-D drift-diffusion transport within the storage layer. A string of three memory cells has been simulated and evaluated for different gate stack compositions and temperatures. The simulator is able to describe the charge transport behavior along bitline and tunneling directions under different operations. Good agreement has been made with experimental data, which hence validates the implemented physical models and altogether confirms the simulation as a valuable tool for evaluating the characteristics of three-dimensional NAND flash memory.; National Natural Science Foundation of China [91230107]; National Basic Research Program of China (973) [2013CBA01604]; National High Technology Research and Development Program of China (863) [2015AA016501]; SCI(E); EI; ARTICLE; gangdu@pku.edu.cn; 12; 59
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/449952]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lun, Zhiyuan,Du, Gang,Zhao, Kai,et al. A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory[J]. SCIENCE CHINA-INFORMATION SCIENCES,2016.
APA	Lun, Zhiyuan,Du, Gang,Zhao, Kai,Liu, Xiaoyan,&Wang, Yi.(2016).A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory.SCIENCE CHINA-INFORMATION SCIENCES.
MLA	Lun, Zhiyuan,et al."A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory".SCIENCE CHINA-INFORMATION SCIENCES (2016).