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科研机构
北京大学 [30]
内容类型
期刊论文 [19]
其他 [11]
发表日期
2016 [2]
2014 [1]
2013 [2]
2012 [4]
2010 [1]
2008 [1]
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专题:北京大学
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High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications
期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016
Yi, Shih-Han
;
Ruan, Dun-Bao
;
Di, Shaoyan
;
Liu, Xiaoyan
;
Wu, Yung Hsien
;
Chin, Albert
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2017/12/04
GaN
MOSFET
high-kappa
reliability
interface
ELECTRON-MOBILITY TRANSISTORS
INSULATOR
Study of impact of LATID on HCI reliability for LDMOS devices
其他
2016-01-01
Chandrashekhar
;
Sheu, Gene
;
Yang, Shao Ming
;
Chien, Ting Yao
;
Lin, Yun Jung
;
Wu, Chieh Chih
;
Lee, Tzu Chieh
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
HOT-CARRIER RELIABILITY
DEGRADATION
TRANSISTORS
MOSFET
An efficient test structure for interface trap characterization under BTI stresses
其他
2014-01-01
He, Yandong
;
Zhang, Ganggang
;
Han, Lin
;
Zhang, Xing
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
Substrate Engineering by Hexagonal Boron Nitride/SiO2 for Hysteresis-Free Graphene FETs and Large-Scale Graphene p-n Junctions
期刊论文
chemistry an asian journal, 2013
Xu, Hua
;
Wu, Juanxia
;
Chen, Yabin
;
Zhang, Haoli
;
Zhang, Jin
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
boron nitride
hysteresis
field-effect transistors
graphene
substrate engineering
ELECTRICAL-FIELD
HIGH-QUALITY
TRANSPORT
RAMAN
SPECTROSCOPY
TRANSISTOR
SCATTERING
FILMS
A Test Structure and Spectroscopic Method for Monitoring Interface Traps
其他
2013-01-01
Wei, Chao
;
He, Yandong
;
Du, Gang
;
Zhang, Ganggang
;
Zhang, Xing
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/13
test structure
DCIV
interface traps
Multiregion DCIV: A Sensitive Tool for Characterizing the Si/SiO2 Interfaces in LDMOSFETs
期刊论文
ieee electron device letters, 2012
He, Yandong
;
Zhang, Ganggang
;
Han, Lin
;
Zhang, Xing
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/10
Interface traps
multiregion direct-current current-voltage (MR-DCIV)
nondestructive characterization technique
shallow trench isolation (STI)-based LDMOSFET
MOS-TRANSISTORS
TRAPS
DEGRADATION
Thermal contact resistance across nanoscale silicon dioxide and silicon interface
期刊论文
应用物理杂志, 2012
Chen, Jie
;
Zhang, Gang
;
Li, Baowen
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/12
NANOWIRE BUILDING-BLOCKS
BOUNDARY CONDUCTANCE
INTERATOMIC POTENTIALS
PHONON DISPERSIONS
CONDUCTIVITY
SI
TEMPERATURE
PERFORMANCE
MOTIONS
SYSTEMS
Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
期刊论文
日本应用物理学杂志, 2012
Ma, Chenyue
;
Mattausch, Hans Juergen
;
Miyake, Masataka
;
Matsuzawa, Kazuya
;
Iizuka, Takahiro
;
Yamaguchi, Seiichiro
;
Hoshida, Teruhiko
;
Kinoshita, Akinari
;
Arakawa, Takahiko
;
He, Jin
;
Miura-Mattausch, Mitiko
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/13
NBTI DEGRADATION
TRAP GENERATION
P-MOSFETS
INTERFACE
Three-dimensional Monte Carlo simulation of bulk fin field effect transistor
期刊论文
chinese physics b, 2012
Wang Jun-Cheng
;
Du Gang
;
Wei Kang-Liang
;
Zhang Xing
;
Liu Xiao-Yan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/13
bulk fin field effect transistor (FinFET)
three-dimensional (3D) Monte Carlo simulation
surface roughness scattering
substrate bias effect
QUANTUM BOLTZMANN-EQUATION
SURFACE-ROUGHNESS
MOSFETS
INTERFACE
CHANNEL
Normalized differential conductance spectroscopy to study the tunneling properties of post soft breakdown SiO2
其他
2010-01-01
Xu, Mingzhen
;
Tan, Changhua
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
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