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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：期刊论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文 Chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: 6 作者:  Tang Hai-Ma;  Zheng Zhong-Shan;  Zhang En-Xia;  Yu Fang;  Li Ning 收藏  |  浏览/下载：104/0  |  提交时间：2019/05/12 Silicon-on-insulator wafers  Radiation hardness  Nitrogen implantation   Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers 期刊论文 journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102 Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia 收藏  |  浏览/下载：18/0  |  提交时间：2011/08/16 Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106106 Tang HM (Tang Hai-Ma); Zheng ZS (Zheng Zhong-Shan); Zhang EX (Zhang En-Xia); Yu F (Yu Fang); Li N (Li Ning); Wang NJ (Wang Ning-Juan) 收藏  |  浏览/下载：49/0  |  提交时间：2010/11/02 silicon-on-insulator wafers  radiation hardness  nitrogen implantation   Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation 期刊论文 journal of electronic materials, 2005, 卷号: 34, 期号: 11, 页码: l53-l56 Zhang EX; Sun JY; Chen J; Zhang ZX; Wang X; Li N; Zhang GQ; Liu ZL 收藏  |  浏览/下载：193/29  |  提交时间：2010/03/17 silicon-on-insulator (SOI)   Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing 期刊论文 semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573 Yi WB; Zhang EX; Chen M; Li N; Zhang GQ; Liu ZL; Wang X 收藏  |  浏览/下载：179/57  |  提交时间：2010/03/09 LAYERS   Design of Tapered Rib Spot-Size Converter with Double-Cladding Structure 期刊论文 半导体学报, 2004, 卷号: 25, 期号: 8, 页码: 913-917 作者:  Chen Shaowu 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23 Studies of 6h-sic devices 期刊论文 Current applied physics, 2002, 卷号: 2, 期号: 5, 页码: 393-399 作者:  Wang, SR;  Liu, ZL 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Sic  Schottky  Pn junction diodes  Mos capacitor   Studies of 6H-SiC devices 期刊论文 current applied physics, 2002, 卷号: 2, 期号: 5, 页码: 393-399 Wang SR; Liu ZL 收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12 SiC  Schottky  pn junction diodes  MOS capacitor  JUNCTION DIODES   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 期刊论文 Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46 作者:  Li, Z;  Dezilllie, B;  Eremin, V;  Li, CJ;  Verbitskaya, E 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Strip detectors  Silicon detectors  Annealing  Simulation  Irradiation   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1999, 卷号: 426, 期号: 1, 页码: 38-46 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12 strip detectors  silicon detectors  annealing  simulation  irradiation  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS  N-EFF