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Ultrafast UV laser-induced dynamics in fused silica 会议论文
spie laser damage - 46th annual symposium on optical materials for high power lasers
作者:  Du, Juan;  Xue, Bing;  Liu, Jun;  Li, Zehan;  Kobayashi, Takayoshi
收藏  |  浏览/下载:14/0  |  提交时间:2016/11/28
Ultrafast UV laser induced dynamics in dielectric coating materials before laser damage 会议论文
conference on pacific rim laser damage (pld) on optical materials for high power lasers
作者:  Du, Juan;  Li, Zehan;  Kobayashi, Takayoshi;  Zhao, Yuanan;  Leng, Yuxin
收藏  |  浏览/下载:15/0  |  提交时间:2016/11/28
Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文
Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:10/0  |  提交时间:2013/03/25
In this paper  highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2)  PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2  a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons  where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2  3  4.... Under excitation density of 300 kW/cm 2  the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2  the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.  
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文
15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005
作者:  Jin P
收藏  |  浏览/下载:159/26  |  提交时间:2010/03/29
Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy 会议论文
10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002
Li GH; Fang ZL; Su FH; Ma BS; Ding K; Han HX; Sou IK; Ge WK
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Growth and photoluminescence of InAlGaN films 会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
作者:  Li DB
收藏  |  浏览/下载:13/2  |  提交时间:2010/10/29
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003
作者:  Tan PH
收藏  |  浏览/下载:17/0  |  提交时间:2010/10/29
Optical properties of AIInGaN quaternary alloys 会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK
收藏  |  浏览/下载:10/0  |  提交时间:2010/10/29
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/15
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 会议论文
4th international conference on nitride semiconductors (icns-4), denver, colorado, jul 16-20, 2001
Xu SJ; Or CT; Li Q; Zheng LX; Xie MH; Tong SY; Yang H
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15


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