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A CMOS Compatible, Forming Free TaON-based ReRAM with Low Soft Errors and Good Retention 会议论文
作者:  Tai L(台路);  Xu XX(许晓欣);  Yuan P(袁鹏);  Yu J(余杰);  Luo Q(罗庆)
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/13
A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement 会议论文
作者:  Han, Xiaowei;  Jia, Qian;  Sun, Hongbin;  Wang, Longfei;  Wu, Huaqiang
收藏  |  浏览/下载:8/0  |  提交时间:2019/11/26
A Double-References and Dynamic-Tracking scheme for writing bit-yield improvement of ReRAM 会议论文
作者:  Chen CY(陈铖颖)
收藏  |  浏览/下载:12/0  |  提交时间:2017/05/18
An Experimental Study on the Potential Use of ReRAM as SSD Buffer 会议论文
作者:  Wu, Mengnan;  Yang, Yang;  Dai, Liangliang;  Zhang, Xinxin;  Sun, Hongbin
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/02
采用低电压横流扫描的forming方式对Cu/SixNy/Pt阻变的特性进行改善 会议论文
作者:  刘明
收藏  |  浏览/下载:11/0  |  提交时间:2012/11/19
Rectifying Switching Characteristics of PtanO/Pt Structure Based Resistive Memory 会议论文
作者:  Wang, Jianfeng;  Song, Zhongxiao;  Xu, Kewei;  Liu, Ming
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/10
Multilevel Storage Characteristics in ZrO2-ReRAM Brought about by Ideal Current Limiter 会议论文
上海, 0000-00-00 00:00:00
作者:  Yan Wang;  Qi Liu;  Hang-Bing Lv;  Shi-Bing Long;  Sen Zhang
收藏  |  浏览/下载:2/0  |  提交时间:2019/04/22


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