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Bacillus subtilis biofertilizer mitigating agricultural ammonia emission and shifting soil nitrogen cycling microbiomes 会议论文
作者:  Sun, Bo;  Bai, Zhihui;  Bao, Lijun;  Xue, Lixia;  Zhang, Shiwei
收藏  |  浏览/下载：8/0  |  提交时间：2020/12/18
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Nanostructured electrodes and photoactive layers for efficient, stable and flexible organic photovoltaic devices 会议论文
Toronto, ON, Canada, May 12, 2013 - May 16, 2013
作者:  Servati, P.;  Gholamkhass, B.;  Soltanian, S.;  Rahmanian, R.;  Kiasari, N.M.
收藏  |  浏览/下载：10/0  |  提交时间：2018/03/16
Water chemistry in forested acid sensitive sites in sub-tropical Asia receiving acid rain and alkaline dust 会议论文
APPLIED GEOCHEMISTRY, 7th International Conference on Acid Deposition, Prague, CZECH REPUBLIC, Web of Science
Vogt, Rolf D.; Guo, Jingheng; Luo, Jiahai; Peng, Xiaoyu; Xiang, Renjun; Xiao, Jinsong; Zhang, Xiaoshan; Zhao, Dawei; Zhao, Yu
收藏  |  浏览/下载：2/0
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Wang, QY; Shen, WJ; Wang, J; Wang, JH; Zeng, YP; Li, JM
收藏  |  浏览/下载：195/31  |  提交时间：2010/03/29
AlGaInP visible quantum well lasers for information technology 会议论文
1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98), prague, czech republic, jun 15-17, 1998
Yu JZ; Chen LH; Ma XY; Wang QM
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15
MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文
2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997
Duan SK; Teng XG; Wang YT; Li GH; Jiang HX; Han P; Lu DC
收藏  |  浏览/下载：5/0  |  提交时间：2010/11/15
GaN  MgAl2O4  MOVPE  LED  DIODES  

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