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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Numerical simulation study on quantum efficiency characteristics of InP/InGaAs/InP infrared photocathode 会议论文 international symposium on infrared technology and application and the international symposiums on robot sensing and advanced control, beijing, china, 2016-05-09 作者:  Xu, Junkai;  Xu, Xiangyan;  Tian, Jinshou;  Luo, Duan;  Hui, Dandan 收藏  |  浏览/下载：19/0  |  提交时间：2017/03/10 High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Ning Y. Q.; Qin L.; Sun Y. F.; Li T.; Cui J. J.; Peng B.; Liu G. Y.; Zhang Y.; Liu Y.; Wang L. J.; Cui D. F.; Xu Z. Y. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.   Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I 会议论文 conference on nanophotonic materials iii, san diego, ca, aug 13-14, 2006 作者:  Pan JQ 收藏  |  浏览/下载：154/17  |  提交时间：2010/03/29 InP   Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Yang GW; Xu ZT; Xu JY; Ma XY; Zhang JM; Chen LH 收藏  |  浏览/下载：8/0  |  提交时间：2010/10/29 strained quantum well  semiconductor lasers