Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
	Yang GW ; Xu ZT ; Xu JY ; Ma XY ; Zhang JM ; Chen LH
	1998
会议名称	semiconductor lasers iii
会议日期	sep 16-18, 1998
会议地点	beijing, peoples r china
关键词	strained quantum well semiconductor lasers
页码	64-70
通讯作者	yang gw chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	in this paper, we report on the design, growth and fabrication of 980nm strained ingaas quantum well lasers employing novel material system of al-free active region and algaas cladding layers. the use of algaas cladding instead of ingap provides potential advantages in laser structure design, improvement of surface morphology and laser performance. we demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. the laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). the broad-area and ridge-waveguide laser devices are both fabricated. for 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170ma, a high slope efficiency of 1.0w/a and high output power of more than 3.5w are achieved. the temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (t-o) of 200-250k and a wavelength shift coefficient of 0.34nm/degrees c. for 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mw with god-free thermal roll-over characteristics is obtained.
英文摘要	in this paper, we report on the design, growth and fabrication of 980nm strained ingaas quantum well lasers employing novel material system of al-free active region and algaas cladding layers. the use of algaas cladding instead of ingap provides potential advantages in laser structure design, improvement of surface morphology and laser performance. we demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. the laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). the broad-area and ridge-waveguide laser devices are both fabricated. for 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170ma, a high slope efficiency of 1.0w/a and high output power of more than 3.5w are achieved. the temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (t-o) of 200-250k and a wavelength shift coefficient of 0.34nm/degrees c. for 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mw with god-free thermal roll-over characteristics is obtained.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:21z (gmt). no. of bitstreams: 1 3045.pdf: 365307 bytes, checksum: 98923527c6104c6f473f9db745278729 (md5) previous issue date: 1998; spie.; cos.; coema.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; cos.; coema.
会议录	semiconductor lasers iii, 3547
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	半导体物理
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3008-0
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13885]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang GW,Xu ZT,Xu JY,et al. Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs[C]. 见:semiconductor lasers iii. beijing, peoples r china. sep 16-18, 1998.