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科研机构
半导体研究所 [14]
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会议论文 [14]
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2008 [1]
2003 [1]
2002 [1]
2001 [3]
2000 [4]
1999 [2]
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半导体材料 [11]
光电子学 [1]
半导体物理 [1]
微电子学 [1]
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内容类型:会议论文
专题:半导体研究所
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In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Liu, YF
;
Xie, J
;
Yang, JL
;
Tang, LJ
;
Yang, FH
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/03/09
FILMS
High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ION-SCATTERING SPECTROSCOPY
LATTICE POLARITY
SINGLE-CRYSTALS
FILMS
POLARIZATION
GAN(0001)
SURFACES
GROWTH
DIODES
Stress analysis of silica-based arrayed waveguide grating by a finite element method
会议论文
photonics asia symposium 2002, shanghai, peoples r china, oct 14-18, 2002
Deng XQ
;
Yang QQ
;
Wang HJ
;
Hu XW
;
Wang QM
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/10/29
finite element method
stress
silica optical waveguide on silicon
birefringence
OPTICAL WAVE-GUIDES
DIFFERENCE METHOD
Epitaxial growth of SiC on complex substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
optical microscopy
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
SAPPHIRE
DEPOSITION
FILMS
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM
;
Sun GS
;
Zhu SR
;
Wang L
;
Luo MC
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
LOW-TEMPERATURE GROWTH
FILMS
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/11/15
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures
会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:
Han PD
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/10/29
AlGaN/GaN heterostructures
In-doping
2DEG
electron sheet density
X-ray diffraction
etching
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
MOBILITY
GROWTH
FILMS
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
会议论文
10th international conference on metalorganic vapor phase epitaxy (icmovpe-x), sapporo, japan, jun 05-09, 2000
Lu DC
;
Wang CX
;
Yuan HR
;
Liu XL
;
Wang XH
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
GaN
annealing treatment
In-doping
MOVPE
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
BUFFER LAYER
FILMS
SAPPHIRE
Influence of precipitates on GaN epilayer quality
会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY
;
Huang QS
;
Wang ZG
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
precipitate
GaN
WDS
TEM
cathodoluminescence
VAPOR-PHASE EPITAXY
FILMS
MECHANISM
GROWTH
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix
会议论文
4th international conference on thin film physics and applications, shanghai, peoples r china, may 08-11, 2000
Ma ZX
;
Liao XB
;
Zheng WM
;
Yu J
;
Chu JH
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/10/29
nanocrystalline silicon
Raman scattering
infrared absorption
phonon confinement
MICROCRYSTALLINE SILICON
POLYCRYSTALLINE SILICON
FILMS
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