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METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES 专利
专利号: EP1299900A2, 公开日期: 2003-04-09
作者:  FLYNN, JEFFREY, S.;  BRANDES, GEORGE, R.;  VAUDO, ROBERT, P.;  KEOGH, DAVID, M.;  XU, XUEPING
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