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	METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
	FLYNN, JEFFREY, S.; BRANDES, GEORGE, R.; VAUDO, ROBERT, P.; KEOGH, DAVID, M.; XU, XUEPING; LANDINI, BARBARA, E.
著作权人	CREE, INC.
专利号	EP1299900A2
国家	欧洲专利局
文献子类	发明申请
其他题名	METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
英文摘要	A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10, nitrogen source material partial pressure in a range of from about 1 to about 10 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.
公开日期	2003-04-09
申请日期	2001-06-27
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43401]
专题	半导体激光器专利数据库
作者单位	CREE, INC.
推荐引用方式 GB/T 7714	FLYNN, JEFFREY, S.,BRANDES, GEORGE, R.,VAUDO, ROBERT, P.,et al. METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES. EP1299900A2.

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