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| Semiconductor device comprising a bonding structure including a silver-tin compound and a nickel-tin compound and method of manufacturing the same 专利 专利号: EP2993692A2, 申请日期: 2016-03-09, 公开日期: 2016-03-09 作者: CHU, KUNMO; MOON, CHANGYOUL; LEE, SUNGHEE; HWANG, JUNSIK
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:18/0  |  提交时间:2019/12/30 |
| Preparation method for flip chip full intermetallic compound interconnection welding point, involves providing upper part of second welding plate with welding layer, and providing inter-metallic compound between first plate and second plate. 专利 申请日期: 2015-01-01, 公开日期: 2015-06-17 作者: HUANG M LIU Y MA H ZHAO N ZHONG Y H
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:2/0  |  提交时间:2019/12/09 |
| Intermetallic compound bonding method used for three-dimensional package chip stack, comprises putting solder and filler metal on both sides of metal bumps, heating, and brazing. 专利 申请日期: 2015-01-01, 公开日期: 2015-06-17 作者: HUANG M MA H ZHAO J ZHAO N ZHONG Y
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| Synthesis of block-shaped silicon-titanium intermetallic compound involves heating titanium dioxide-containing multivariant slag system to molten state, adding silicon alloy and reacting in inert gas which is not reacted with reactants. 专利 申请日期: 2015-01-01, 公开日期: 2015-09-02 作者: CHEN Z LI J LI Y MORITA K TAN Y
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| Three-dimensional vertical through-hole filling intermetallic compound package, has package body made of brazing filler metal, where brazing filler metal is selected from group consisting of tin filler metal and indium filler metal. 专利 申请日期: 2015-01-01, 公开日期: 2015-06-10 作者: HUANG M MA H YANG F ZHANG F ZHANG Z
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:3/0  |  提交时间:2019/12/09 |
| Preparation of intermetallic compound thin film involves providing first metal substrate, subjecting first metal substrate to plating, sputtering, vapor deposition, or brazing with filler metal layer, and providing second metal substrate. 专利 申请日期: 2015-01-01, 公开日期: 2015-05-27 作者: HUANG M MA H YANG F ZHANG Z ZHAO J
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:4/0  |  提交时间:2019/12/09 |
| 永久金屬性結合方法 专利 专利号: HK1006377A, 申请日期: 2000-07-21, 公开日期: 2000-07-21 作者: DONALD DINGLEY BACON; AVISHAY KATZ; CHIEN-HSUN LEE; KING LIEN TAI; YIU-MAN WONG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:23/0  |  提交时间:2019/12/30 |
| 永久金屬性結合方法 专利 专利号: HK1006377A, 申请日期: 2000-07-21, 公开日期: 2000-07-21 作者: DONALD DINGLEY BACON; AVISHAY KATZ; CHIEN-HSUN LEE; KING LIEN TAI; YIU-MAN WONG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:10/0  |  提交时间:2019/12/30 |
| Permanent metallic bonding method 专利 专利号: US5234153, 申请日期: 1993-08-10, 公开日期: 1993-08-10 作者: BACON, DONLAD D.; KATZ, AVISHAY; LEE, CHIEN-HSUN; TAI, KING L.; WONG, YIU-MAN
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:11/0  |  提交时间:2019/12/24 |
| Semiconductor element 专利 专利号: JP1983040879A, 申请日期: 1983-03-09, 公开日期: 1983-03-09 作者: IWANE GANZOU; FUKUDA MITSUO; TAKAHEI KENICHIROU; ADACHI SADAO
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2020/01/13 |