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CORC

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Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes 期刊论文
ADVANCED MATERIALS, 2018, 卷号: 30, 期号: 31
作者:  Zheng, Jianyun;  Lyu, Yanhong;  Xie, Chao;  Wang, Ruilun;  Tao, Li
收藏  |  浏览/下载：45/0  |  提交时间：2018/12/28
Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 19, 页码: 194101-194101
Di, ZF; Huang, MQ; Wang, YQ; Nastasi, M
收藏  |  浏览/下载：9/0  |  提交时间：2012/03/24
Efficient oxygen gettering in Si by coimplantation of hydrogen and helium 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 16, 页码: 161907-161907
Ou, X; Kogler, R; Mucklich, A; Skorupa, W; Moller, W; Wang, X; Gerlach, JW; Rauschenbach, B
收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24
Effects of buried oxide layer on indium diffusion in separation by implantation of oxygen 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 6, 页码: 3217-3220
Chen, P; Zhu, M; Fu, RKY; Chu, PK; An, ZH; Liu, W; Montgomery, N; Biswas, S
收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24
Comparison between the different implantation orders in H+ and He+ coimplantation 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 卷号: 34, 期号: 4, 页码: 477-482
Duo, XZ; Liu, WL; Zhang, MA; Wang, LW; Lin, CL; Okuyama, M; Noda, M; Cheung, WY; Chu, PK; Hu, PG; Wang, SX; Wang, LM
收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24
NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY 期刊论文
APPLIED PHYSICS LETTERS, 1991, 卷号: 59, 期号: 18, 页码: 2260-2262
HU, CM; HUANG, YX; YE, HJ; SHEN, SC; QI, MW
收藏  |  浏览/下载：13/0  |  提交时间：2012/03/25

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