NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY

	NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY
	HU, CM ; HUANG, YX ; YE, HJ ; SHEN, SC ; QI, MW
刊名	APPLIED PHYSICS LETTERS
	1991
卷号	59 期号:18 页码:2260-2262
关键词	SHALLOW DONORS IMPURITIES
ISSN号	0003-6951
通讯作者	HU, CM, ACAD SINICA,SHANGHAI INST TECH PHYS,NATL LAB INFRARED PHYS,SHANGHAI 200083,PEOPLES R CHINA
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98325]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	HU, CM,HUANG, YX,YE, HJ,et al. NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY[J]. APPLIED PHYSICS LETTERS,1991,59(18):2260-2262.
APA	HU, CM,HUANG, YX,YE, HJ,SHEN, SC,&QI, MW.(1991).NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY.APPLIED PHYSICS LETTERS,59(18),2260-2262.
MLA	HU, CM,et al."NITROGEN-OXYGEN COMPLEXES IN SILICON STUDIED BY PHOTOTHERMAL IONIZATION SPECTROSCOPY".APPLIED PHYSICS LETTERS 59.18(1991):2260-2262.