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科研机构
半导体研究所 [9]
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期刊论文 [9]
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2011 [1]
2010 [1]
2009 [2]
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半导体物理 [9]
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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057101
Deng HX (Deng Hui-Xiong)
;
Jiang XW (Jiang Xiang-Wei)
;
Tang LM (Tang Li-Ming)
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  |  
浏览/下载:101/3
  |  
提交时间:2010/05/24
SIMULATION
TRANSISTORS
LIMIT
NM
Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles
期刊论文
journal of physical chemistry c, 2009, 卷号: 113, 期号: 52, 页码: 21506-21511
Gai YQ(盖艳琴)
;
Peng HW(彭浩为)
;
Li JB(李京波)
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  |  
浏览/下载:55/0
  |  
提交时间:2010/04/04
MULTIPLE EXCITON GENERATION
AUGMENTED-WAVE METHOD
1ST-PRINCIPLES CALCULATIONS
COLLOIDAL PBSE
SURFACE
PSEUDOPOTENTIALS
NANOCRYSTALS
RELAXATION
INTERBAND
Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510
Jiang XW (Jiang Xiang-Wei)
;
Deng HX (Deng Hui-Xiong)
;
Li SS (Li Shu-Shen)
;
Luo JW (Luo Jun-Wei)
;
Wang LW (Wang Lin-Wang)
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  |  
浏览/下载:159/62
  |  
提交时间:2010/03/08
ELECTRONIC-STRUCTURE
Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 12, 页码: art. no. 124507
Deng, HX
;
Jiang, XW
;
Luo, JW
;
Li, SS
;
Xia, JB
;
Wang, LW
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  |  
浏览/下载:65/5
  |  
提交时间:2010/03/08
SIMULATION
MOSFETS
SUPERLATTICES
REGIME
LIMIT
INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS
期刊论文
communications in theoretical physics, 1993, 卷号: 20, 期号: 2, 页码: 159-170
WANG JQ
;
GU ZQ
;
LI MF
;
LAI WY
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  |  
浏览/下载:21/0
  |  
提交时间:2010/11/15
NORM-CONSERVING PSEUDOPOTENTIALS
LATTICE-DYNAMICAL PROPERTIES
SCATTERING RATES
STRUCTURAL-PROPERTIES
TEMPERATURE-DEPENDENCE
ELECTRON-PHONON
GAAS
SPECTROSCOPY
POINTS
TIN
1ST-PRINCIPLES CALCULATIONS FOR QUASI-PARTICLE ENERGIES OF GAP AND GAAS
期刊论文
physical review b, 1991, 卷号: 44, 期号: 16, 页码: 8707-8712
WANG JQ
;
GU ZQ
;
LI MF
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  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
EXCHANGE-CORRELATION POTENTIALS
DENSITY-FUNCTIONAL THEORY
ZINCBLENDE SEMICONDUCTORS
STRUCTURAL-PROPERTIES
ELECTRON
SILICON
PSEUDOPOTENTIALS
DISCONTINUITY
APPROXIMATION
INSULATORS
1ST PRINCIPLE CALCULATIONS OF QUASI-PARTICLE ENERGIES FOR BAND STRUCTURES OF SEMICONDUCTORS
期刊论文
communications in theoretical physics, 1991, 卷号: 15, 期号: 2, 页码: 169-194
WANG JQ
;
GU ZQ
;
WANG BS
;
LI MF
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
NORM-CONSERVING PSEUDOPOTENTIALS
ANGLE-RESOLVED PHOTOEMISSION
DENSITY-FUNCTIONAL THEORY
GROUND-STATE
ZINCBLENDE SEMICONDUCTORS
CRYSTALLINE SILICON
ELECTRON
SI
INSULATORS
GAAS
1ST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V-ZINCBLENDE SEMICONDUCTORS
期刊论文
physics letters a, 1991, 卷号: 155, 期号: 0, 页码: 506-509
WANG JQ
;
GU ZQ
;
LI MF
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
NORM-CONSERVING PSEUDOPOTENTIALS
LATTICE-DYNAMICS
DEFORMATION POTENTIALS
STRUCTURAL-PROPERTIES
GALLIUM-PHOSPHIDE
TIN
ALP
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