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科研机构
半导体研究所 [12]
内容类型
期刊论文 [11]
会议论文 [1]
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2009 [5]
2008 [1]
2003 [1]
2002 [2]
2001 [1]
1999 [2]
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半导体物理 [12]
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Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:214/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:71/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
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  |  
浏览/下载:68/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505
作者:
Chen L
;
Qian X
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  |  
浏览/下载:85/39
  |  
提交时间:2010/03/08
annealing
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:218/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
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  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
neutron irradiation
annealing
defects in silicon
SPECTRA
Fe-diffusion-induced defects in InP annealed in iron phosphide ambient
期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931
Zhao YW
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Lin LY
收藏
  |  
浏览/下载:97/7
  |  
提交时间:2010/08/12
indium phosphide
annealing
semi-insulating
defect
diffusion
ENCAPSULATED CZOCHRALSKI INP
SEMIINSULATING INP
PHOTO-LUMINESCENCE
INDIUM-PHOSPHIDE
UNDOPED INP
PHOTOLUMINESCENCE
CRYSTALS
PRESSURE
Effects of annealing on properties of spin-valve pinned with FeMn alloy
期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 8, 页码: 1846-1850
Chai CL
;
Teng J
;
Yu GH
;
Zhu FW
;
Lai WY
;
Xiao JM
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  |  
浏览/下载:59/0
  |  
提交时间:2010/08/12
annealing
spin-valve
diffusion along grain boundary
TEMPERATURE-DEPENDENCE
MAGNETORESISTANCE
FILMS
COERCIVITY
FIELD
BIAS
NIO
The microstructure and its high-temperature annealing behaviours of a-Si : O : H film
期刊论文
acta physica sinica, 2001, 卷号: 50, 期号: 12, 页码: 2418-2422
Wang YQ
;
Chen CY
;
Chen WD
;
Yang FH
;
Diao HW
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  |  
浏览/下载:82/6
  |  
提交时间:2010/08/12
a-Si : O : H
nc-Si
microstructure
annealing
CHEMICAL-VAPOR-DEPOSITION
AMORPHOUS SIO2
OPTICAL-PROPERTIES
SILICON
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