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Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文
nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359
作者:  Tan PH
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn 期刊论文
journal of crystal growth, 2011, 卷号: 316, 期号: 1, 页码: 145-148
Yang GD; Zhu F; Dong S
收藏  |  浏览/下载：67/2  |  提交时间：2011/07/05
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：35/2  |  提交时间：2011/07/05
Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 7, 页码: art. no. 077305
Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Guo J (Guo Jie); Tang B (Tang Bao); Ren ZW (Ren Zheng-Wei); He ZH (He Zhen-Hong); Niu ZC (Niu Zhi-Chuan)
收藏  |  浏览/下载：27/0  |  提交时间：2010/08/17
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD
收藏  |  浏览/下载：93/14  |  提交时间：2010/03/08
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 10, 页码: art.no.107302
Wang H (Wang Hui); Zhu JH (Zhu Ji-Hong); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：158/39  |  提交时间：2010/03/08
Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017802
作者:  Jin P
收藏  |  浏览/下载：168/34  |  提交时间：2010/03/08
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP
收藏  |  浏览/下载：56/6  |  提交时间：2010/03/08
Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647
作者:  Zhang Y;  Zhang Y
收藏  |  浏览/下载：268/32  |  提交时间：2010/03/08
Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1120-1123
Dou, XM; Sun, BQ; Wang, BR; Ma, SS; Zhou, R; Huang, SS; Ni, HQ; Niu, ZC
收藏  |  浏览/下载：51/2  |  提交时间：2010/03/08

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