Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

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	Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes
	Zhang, Y ; Han, CL ; Gao, JF ; Zhu, ZP ; Wang, BQ ; Zeng, YP
刊名	chinese physics b
	2008
卷号	17 期号:4 页码:1472-1474
关键词	resonant tunnelling diode molecular beam epitaxy
ISSN号	1674-1056
通讯作者	zhang, y, chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china. 电子邮箱地址: zhang_yang@semi.ac.cn
中文摘要	this paper investigates the dependence of current-voltage characteristics of alas/in0.53ga0.47as/inas resonant tunnelling diodes (rtds) on spacer layer thickness. it finds that the peak and the valley current density j in the negative differential resistance (ndr) region depends strongly on the thickness of the spacer layer. the measured peak to valley current ratio of rtds studied here is shown to improve while the current density through rtds decreases with increasing spacer layer thickness below a critical value.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6738]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang, Y,Han, CL,Gao, JF,et al. Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes[J]. chinese physics b,2008,17(4):1472-1474.
APA	Zhang, Y,Han, CL,Gao, JF,Zhu, ZP,Wang, BQ,&Zeng, YP.(2008).Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes.chinese physics b,17(4),1472-1474.
MLA	Zhang, Y,et al."Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes".chinese physics b 17.4(2008):1472-1474.