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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots 期刊论文 physical review b, 2000, 卷号: 61, 期号: 8, 页码: 5530-5534 Wang HL; Yang FH; Feng SL; Zhu HJ; Ning D; Wang H; Wang XD 收藏  |  浏览/下载：49/0  |  提交时间：2010/08/12 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 期刊论文 compound semiconductors 1999, 2000, 期号: 166, 页码: 251-256 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文 26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Electronic characteristics of InAs self-assembled quantum dots 会议论文 9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY   Electronic characteristics of InAs self-assembled quantum dots 期刊论文 physica e-low-dimensional systems & nanostructures, 2000, 卷号: 7, 期号: 3-4, 页码: 383-387 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY   Evidence of multimodal patterns of self-organized quantum dots 期刊论文 superlattices and microstructures, 1998, 卷号: 24, 期号: 5, 页码: 353-357 Chen F; Feng SL; Zhao Q; Wang ZR 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 DLTS  quantum dots  GaAs/InAs  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY  TRANSITION  GROWTH  ELECTRONIC-STRUCTURE