×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [15]
内容类型
期刊论文 [15]
发表日期
2011 [3]
2010 [2]
2009 [1]
2008 [3]
2003 [1]
2002 [1]
更多...
学科主题
半导体物理 [15]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共15条,第1-10条
帮助
限定条件
学科主题:半导体物理
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
journal of raman spectroscopy, 2011, 卷号: 42, 期号: 6, 页码: 1388-1391
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
收藏
  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:
Jiang XW
收藏
  |  
浏览/下载:50/2
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR-DEVICES
SILICON DEVICES
MONTE-CARLO
MOSFETS
NANOTRANSISTORS
APPROXIMATION
EQUATIONS
DESIGN
MODELS
First-principles prediction of the magnetism of 3d transition-metal-doped Rocksalt MgO
期刊论文
physics letters a, 2010, 卷号: 374, 期号: 10, 页码: 1292-1296
Shi LJ (Shi Li-Jie)
收藏
  |  
浏览/下载:18/3
  |  
提交时间:2010/04/13
Ferromagnetism
Half-metal
Double-exchange mechanism
TEMPERATURE FERROMAGNETISM
ELECTRIC PROPERTIES
ZNO FILMS
II-VI
SEMICONDUCTORS
SPINTRONICS
MODEL
SPIN
GAS
Band-tail shape and transport near the metal-insulator transition in Si-doped
期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202
Misuraca J (Misuraca Jennifer)
;
Trbovic J (Trbovic Jelena)
;
Lu J (Lu Jun)
;
Zhao JH (Zhao Jianhua)
;
Ohno Y (Ohno Yuzo)
;
Ohno H (Ohno Hideo)
;
Xiong P (Xiong Peng)
;
von Molnar S (von Molnar Stephan)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/10/11
PERSISTENT PHOTOCONDUCTIVITY
DX CENTERS
ALXGA1-XAS
GAAS
SEMICONDUCTORS
Room Temperature Ferromagnetism of Mn Implanted AlInN
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 040202
Majid A
;
Sharif R
;
Ali A
;
Zhu JJ
收藏
  |  
浏览/下载:248/25
  |  
提交时间:2010/03/08
MAGNETIC-PROPERTIES
SEMICONDUCTORS
GAN
CR
ALLOYS
GROWTH
FILMS
The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 8, 页码: art. no. 084307
Xu, Q
;
Li, JB
;
Li, SS
;
Xia, JB
收藏
  |  
浏览/下载:75/1
  |  
提交时间:2010/03/08
EXCHANGE INTERACTION
SEMICONDUCTORS
GAAS
ENERGIES
DOTS
MN
First-principles study of the electronic structures and magnetic properties of 3d transition metal-doped anatase TiO2
期刊论文
journal of physics-condensed matter, 2008, 卷号: 20, 期号: 12, 页码: art. no. 125207
Peng, HW
;
Li, JB
;
Li, SS
;
Xia, JB
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/03/08
TITANIUM-DIOXIDE
ROOM-TEMPERATURE
SEMICONDUCTORS
FERROMAGNETISM
MODEL
Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 07d105
Du, GX
;
Han, XF
;
Deng, JJ
;
Wang, WZ
;
Zhao, JH
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/03/08
HETEROSTRUCTURES
SEMICONDUCTORS
(GA
MN)AS
Magnetic properties and rectifying behaviour of silicon doped with gadolinium
期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473
Zhou JP
;
Chen NF
;
Song SL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Lin LY
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
magnetic semiconductor
magnetic p-n junction
ion beam epitaxy
gadolinium silicides
METAL-INSULATOR-TRANSITION
P-N-JUNCTION
INDUCED FERROMAGNETISM
SI/SIER INTERFACE
BEAM EPITAXY
SEMICONDUCTORS
EXCITATION
MAGNETORESISTANCE
ALLOYS
©版权所有 ©2017 CSpace - Powered by
CSpace