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CORC

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Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well 期刊论文
physical review letters, 2012, 卷号: 109, 期号: 18, 页码: 186803
Miao MS (Miao, M. S.); Yan Q (Yan, Q.); Van de Walle CG (Van de Walle, C. G.); Lou WK (Lou, W. K.); Li LL (Li, L. L.); Chang K (Chang, K.)
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/26
The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 23, 页码: art.no.235104
Zhu, JH (Zhu, J. H.); Wang, LJ (Wang, L. J.); Zhang, SM (Zhang, S. M.); Wang, H (Wang, H.); Zhao, DG (Zhao, D. G.); Zhu, JJ (Zhu, J. J.); Liu, ZS (Liu, Z. S.); Jiang, DS (Jiang, D. S.); Qiu, YX (Qiu, Y. X.); Yang, H (Yang, H.)
收藏  |  浏览/下载：143/26  |  提交时间：2010/03/08
Effects of external magnetic field on the effective g factor of (Ga,Mn)As 期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 8, 页码: 5244-5248
Zhou, R; Sun, BQ; Ruan, XZ; Gan, HD; Ji, Y; Wang, WZ; Zhao, JH
收藏  |  浏览/下载：154/1  |  提交时间：2010/03/08
1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz 期刊论文
solid-state electronics, 2007, 卷号: 51, 期号: 3, 页码: 428-432
Wang XL; Cheng TS; Ma ZY; Hu G; Xiao HL; Ran JX; Wang CM; Luo WJ
收藏  |  浏览/下载：95/0  |  提交时间：2010/03/29
Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers 期刊论文
journal of magnetism and magnetic materials, 2007, 卷号: 308, 期号: 2, 页码: 313-317
作者:  Tan PH;  Gan HD
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Metal-semiconductor-metal ultraviolet photodetector based on GaN 期刊论文
science in china series g-physics astronomy, 2003, 卷号: 46, 期号: 2, 页码: 198-203
Wang J; Zhao DA; Liu ZS; Feng G; Zhu JJ; Shen XM; Zhang BS; Yang H
收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique 期刊论文
science in china series g-physics astronomy, 2003, 卷号: 46, 期号: 4, 页码: 437-440
作者:  Zhao DG
收藏  |  浏览/下载：198/6  |  提交时间：2010/08/12
Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells 期刊论文
solid state communications, 2002, 卷号: 122, 期号: 5, 页码: 287-292
Wan SP; Xia JB
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12
Polarity determination for GaN thin films by electron energy-loss spectroscopy 期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 11, 页码: 1990-1992
Kong X; Hu GQ; Duan XF; Lu Y; Liu XL
收藏  |  浏览/下载：63/0  |  提交时间：2010/08/12
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
作者:  Zhao DG
收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12

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