Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well

	Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well
	Miao MS (Miao, M. S.) ; Yan Q (Yan, Q.) ; Van de Walle CG (Van de Walle, C. G.) ; Lou WK (Lou, W. K.) ; Li LL (Li, L. L.) ; Chang K (Chang, K.)
刊名	physical review letters
	2012
卷号	109 期号:18 页码:186803
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23771]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Miao MS ,Yan Q ,Van de Walle CG ,et al. Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well[J]. physical review letters,2012,109(18):186803.
APA	Miao MS ,Yan Q ,Van de Walle CG ,Lou WK ,Li LL ,&Chang K .(2012).Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well.physical review letters,109(18),186803.
MLA	Miao MS ,et al."Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well".physical review letters 109.18(2012):186803.