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科研机构
半导体研究所 [46]
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期刊论文 [44]
会议论文 [2]
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2011 [3]
2010 [6]
2009 [9]
2008 [6]
2006 [5]
2005 [1]
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半导体物理 [46]
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Magnetic and electronic structure properties of Co-doped SnO2 nanoparticles synthesized by the sol-gel-hydrothermal technique
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83930
作者:
Li JB
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  |  
浏览/下载:61/1
  |  
提交时间:2011/07/05
ROOM-TEMPERATURE FERROMAGNETISM
SEMICONDUCTORS
ENERGY
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen
期刊论文
journal of physics and chemistry of solids, 2011, 卷号: 72, 期号: 6, 页码: 725-729
Gai, Yanqin
;
Tang, Gang
;
Li, Jingbo
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浏览/下载:32/0
  |  
提交时间:2012/06/14
Activation energy
Binding energy
Calculations
Complexation
Doping(additives)
Electronic structure
Zinc
Zinc oxide
First-principles prediction of the magnetism of 3d transition-metal-doped Rocksalt MgO
期刊论文
physics letters a, 2010, 卷号: 374, 期号: 10, 页码: 1292-1296
Shi LJ (Shi Li-Jie)
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浏览/下载:18/3
  |  
提交时间:2010/04/13
Ferromagnetism
Half-metal
Double-exchange mechanism
TEMPERATURE FERROMAGNETISM
ELECTRIC PROPERTIES
ZNO FILMS
II-VI
SEMICONDUCTORS
SPINTRONICS
MODEL
SPIN
GAS
First-principles study of UC2 and U2C3
期刊论文
journal of nuclear materials, 2010, 卷号: 396, 期号: 2-3, 页码: 218-222
Shi HL (Shi Hongliang)
;
Zhang P (Zhang Ping)
;
Li SS (Li Shu-Shen)
;
Wang BT (Wang Baotian)
;
Sun B (Sun Bo)
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浏览/下载:78/12
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提交时间:2010/04/21
First-principle calculation
GGA plus U
Elastic constants
Chemical bonding
Valence state
BRILLOUIN-ZONE INTEGRATIONS
CARBIDES
SPECTRA
METALS
Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations
期刊论文
european physical journal b, 2010, 卷号: 77, 期号: 3, 页码: 345-349
Zhang YJ (Zhang Y. J.)
;
Shi HL (Shi H. -L.)
;
Wang SX (Wang S. X.)
;
Zhang P (Zhang P.)
;
Li RW (Li R. W.)
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浏览/下载:32/0
  |  
提交时间:2010/11/27
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
;
Peng HW (Peng Haowei)
;
Xia JB (Xia Jian-Bai)
;
Wang LW (Wang Lin-Wang)
;
Wei SH (Wei Su-Huai)
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  |  
浏览/下载:48/0
  |  
提交时间:2010/12/27
IMPURITIES
GAAS1-XNX
NITROGEN
GAINNAS
STATES
TRAPS
Optical properties of UO2 and PuO2
期刊论文
journal of nuclear materials, 2010, 卷号: 400, 期号: 2, 页码: 151-156
Shi HL (Shi Hongliang)
;
Chu MF (Chu Mingfu)
;
Zhang P (Zhang Ping)
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浏览/下载:75/0
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提交时间:2010/06/18
ELECTRONIC-STRUCTURE
URANIUM-DIOXIDE
POINT-DEFECTS
PHOTOEMISSION
ENERGY
APPROXIMATION
ENERGETICS
PLUTONIUM
CRYSTAL
SPECTRA
Donor-donor binding in In2O3: Engineering shallow donor levels
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming)
;
Wang LL (Wang Ling-Ling)
;
Wang D (Wang Dan)
;
Liu JZ (Liu Jian-Zhe)
;
Chen KQ (Chen Ke-Qiu)
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浏览/下载:67/0
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提交时间:2010/05/24
AUGMENTED-WAVE METHOD
ELECTRONIC-STRUCTURE
SEMICONDUCTORS
FILMS
ZNSE
ZNTE
First principle study of Mg, Si and Mn co-doped GaN
期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 1, 页码: 450-458
作者:
Zhao DG
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浏览/下载:231/44
  |  
提交时间:2010/03/08
Mg Si and Mn co-doped GaN
electronic structure
T-C
optical properties
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