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CORC

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Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 42, 页码: 425103
Lang, XL; Xia, JB
收藏  |  浏览/下载：78/0  |  提交时间：2012/01/06
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
applied physics letters, 2003, 卷号: 83, 期号: 4, 页码: 677-679
作者:  Zhao DG
收藏  |  浏览/下载：1038/2  |  提交时间：2010/08/12
Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs 期刊论文
physica status solidi b-basic research, 1996, 卷号: 198, 期号: 1, 页码: 329-335
Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/11/17
High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells 期刊论文
physical review b, 1996, 卷号: 54, 期号: 19, 页码: 13820-13826
Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM
收藏  |  浏览/下载：56/0  |  提交时间：2010/11/17
INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS 期刊论文
communications in theoretical physics, 1993, 卷号: 20, 期号: 2, 页码: 159-170
WANG JQ; GU ZQ; LI MF; LAI WY
收藏  |  浏览/下载：21/0  |  提交时间：2010/11/15
INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS 期刊论文
physical review b, 1992, 卷号: 46, 期号: 19, 页码: 12358-12364
WANG JQ; GU ZQ; LI MF; LAI WY
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15
1ST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V-ZINCBLENDE SEMICONDUCTORS 期刊论文
physics letters a, 1991, 卷号: 155, 期号: 0, 页码: 506-509
WANG JQ; GU ZQ; LI MF
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15
DEFORMATION POTENTIALS AT THE TOP OF VALENCE BANDS IN SEMICONDUCTORS - ABINITIO PSEUDOPOTENTIAL CALCULATIONS 期刊论文
physical review b, 1990, 卷号: 41, 期号: 12, 页码: 8333-8339
GU ZQ; LI MF; WANG JQ; WANG BS
收藏  |  浏览/下载：117/12  |  提交时间：2010/11/15
ABINITIO PSEUDOPOTENTIAL CALCULATIONS OF OPTICAL-PHONON DEFORMATION POTENTIALS IN ZINCBLENDE SEMICONDUCTORS 期刊论文
physical review b, 1989, 卷号: 39, 期号: 17, 页码: 12789-12793
WANG BS; GU ZQ; WANG JQ; LI MF
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15

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