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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：48/0  |  提交时间：2010/12/27
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong); Nosho H (Nosho, Hidetaka); Tackeuchi A (Tackeuchi, Atsushi); Bian LF (Bian, Lifeng); Dong JR (Dong, Jianrong); Niu ZC (Niu, Zhichuan)
收藏  |  浏览/下载：175/28  |  提交时间：2010/03/08
ALLOYS  
1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth 期刊论文
electronics letters, 2009, 卷号: 45, 期号: 7, 页码: 356-u23
Zhao H; Haglund A; Westburgh P; Wang SM; Gustavsson JS; Sadeghi M; Larsson A
收藏  |  浏览/下载：84/31  |  提交时间：2010/03/08
p-type doping of GaInNAs quaternary alloys 期刊论文
physics letters a, 2008, 卷号: 373, 期号: 1, 页码: 165-168
Shi HL; Duan YF
收藏  |  浏览/下载：235/53  |  提交时间：2010/03/08
Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 5, 页码: art. no. 051908
Lu SL; Bian LF; Uesugi M; Nosho H; Tackeuchi A; Niu ZC
收藏  |  浏览/下载：49/2  |  提交时间：2010/03/08
Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 125-128
Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.); Fang, ZD (Fang, Z. D.); Huang, SS (Huang, S. S.); Zhang, SY (Zhang, S. Y.); Wu, DH (Wu, D. H.); Shun, Z (Shun, Z.); Han, Q (Han, Q.); Wu, RH (Wu, R. H.)
收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29
Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 979-983
Zhao, H (Zhao, H.); Xu, YQ (Xu, Y. Q.); Ni, HQ (Ni, H. Q.); Zhang, SY (Zhang, S. Y.); Han, Q (Han, Q.); Du, Y (Du, Y.); Yang, XH (Yang, X. H.); Wu, RH (Wu, R. H.); Niu, ZC (Niu, Z. C.)
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29
Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature 期刊论文
journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 188-190
Sun, Z (Sun, Z.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.); Xu, ZY (Xu, Z. Y.)
收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG
收藏  |  浏览/下载：224/60  |  提交时间：2010/03/29
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载：85/0  |  提交时间：2010/04/11

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