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科研机构
半导体研究所 [9]
内容类型
期刊论文 [9]
发表日期
2009 [5]
2008 [1]
2005 [1]
2002 [2]
学科主题
半导体物理 [9]
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学科主题:半导体物理
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Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:214/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:71/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
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  |  
浏览/下载:68/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113108
作者:
Jia CH
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  |  
浏览/下载:107/4
  |  
提交时间:2010/03/08
PULSED-LASER DEPOSITION
FERROELECTRIC PROPERTIES
ELECTRICAL-PROPERTIES
STRUCTURAL-PROPERTIES
SUBSTRATE
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1034-1037
Hao, XP
;
Wang, BY
;
Yu, RS
;
Wei, L
;
Wang, H
;
Zhao, DG
;
Hao, WC
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  |  
浏览/下载:71/2
  |  
提交时间:2010/03/08
SILICON-OXIDE FILMS
POSITRON-ANNIHILATION
POROUS SILICON
THIN-FILMS
PHOTOLUMINESCENCE
LAYERS
BEAM
The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering
期刊论文
acta physica sinica, 2005, 卷号: 54, 期号: 5, 页码: 2172-2175
Zhou BQ
;
Liu FZ
;
Zhu MF
;
Gu JH
;
Zhou YQ
;
Liu JL
;
Dong BZ
;
Li GH
;
Ding K
收藏
  |  
浏览/下载:82/48
  |  
提交时间:2010/03/17
hydrogenated microcrystalline silicon thin film
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF
;
Cao YG
;
Xie MH
;
Wang XL
;
Tong SY
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/08/12
MISFIT DISLOCATIONS
DEFECTS
INGAN
GAN
REDUCTION
INDIUM
LAYERS
FILMS
Effects of annealing on properties of spin-valve pinned with FeMn alloy
期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 8, 页码: 1846-1850
Chai CL
;
Teng J
;
Yu GH
;
Zhu FW
;
Lai WY
;
Xiao JM
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/08/12
annealing
spin-valve
diffusion along grain boundary
TEMPERATURE-DEPENDENCE
MAGNETORESISTANCE
FILMS
COERCIVITY
FIELD
BIAS
NIO
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