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科研机构
半导体研究所 [19]
内容类型
期刊论文 [19]
发表日期
2011 [1]
2010 [1]
2009 [2]
2008 [1]
2006 [1]
2003 [3]
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半导体物理 [19]
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学科主题:半导体物理
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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: art. no. 073108
Zhu YH (Zhu Yuan-Hui)
;
Xu Q (Xu Qiang)
;
Fan WJ (Fan Wei-Jun)
;
Wang JW (Wang Jian-Wei)
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  |  
浏览/下载:68/3
  |  
提交时间:2010/05/07
ALLOYS
GE
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong)
;
Nosho H (Nosho, Hidetaka)
;
Tackeuchi A (Tackeuchi, Atsushi)
;
Bian LF (Bian, Lifeng)
;
Dong JR (Dong, Jianrong)
;
Niu ZC (Niu, Zhichuan)
收藏
  |  
浏览/下载:176/28
  |  
提交时间:2010/03/08
ALLOYS
Room Temperature Ferromagnetism of Mn Implanted AlInN
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 040202
Majid A
;
Sharif R
;
Ali A
;
Zhu JJ
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  |  
浏览/下载:249/25
  |  
提交时间:2010/03/08
MAGNETIC-PROPERTIES
SEMICONDUCTORS
GAN
CR
ALLOYS
GROWTH
FILMS
Elasticity, band structure, and piezoelectricity of BexZn1-xO alloys
期刊论文
physics letters a, 2008, 卷号: 372, 期号: 16, 页码: 2930-2933
Duan, YF
;
Shi, HL
;
Qin, LX
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  |  
浏览/下载:80/0
  |  
提交时间:2010/03/08
first-principles
bowing coefficients
piezoelectricity
alloys
elasticity
semiconductor
Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.242108
作者:
Zhang XW
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  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
ENERGY-GAP
100 GAAS
INASSB
INAS1-XSBX
ALLOYS
INSB
TRANSPORT
LAYERS
Magnetic properties and rectifying behaviour of silicon doped with gadolinium
期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473
Zhou JP
;
Chen NF
;
Song SL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Lin LY
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
magnetic semiconductor
magnetic p-n junction
ion beam epitaxy
gadolinium silicides
METAL-INSULATOR-TRANSITION
P-N-JUNCTION
INDUCED FERROMAGNETISM
SI/SIER INTERFACE
BEAM EPITAXY
SEMICONDUCTORS
EXCITATION
MAGNETORESISTANCE
ALLOYS
Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers
期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者:
Xu YQ
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/08/12
GAINNAS
LUMINESCENCE
DIODES
ALLOYS
Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers
期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:
Xu YQ
收藏
  |  
浏览/下载:395/1
  |  
提交时间:2010/08/12
band structure
differential gain
GaInNAs
optical gain
strain compensated
strain mediated
STRAIN
TEMPERATURE
DIODES
ALLOYS
OFFSET
Microstructure of a-SiOx : H
期刊论文
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 10, 页码: 1320-1328
Wang YQ
;
Liao XB
;
Diao HW
;
Cheng WC
;
Li GH
;
Chen CY
;
Zhang SB
;
Xu YY
;
Chen WD
;
Kong GL
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/08/12
a-SiOx : H
microstructure
bonding configuration
CHEMICAL-VAPOR-DEPOSITION
AMORPHOUS-SILICON
ELECTRONIC-PROPERTIES
SIO2/SI INTERFACE
OXYGEN
FILMS
VIBRATIONS
ALLOYS
SYSTEM
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