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| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者: Xu B; Zhou GY; Ye XL; Zhang HY 收藏  |  浏览/下载:54/5  |  提交时间:2011/07/05
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| On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method 期刊论文 journal of crystal growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301 Yin ZG (Yin Zhigang); Chen NF (Chen Nuofu); Dai RX (Dai Ruixuan); Liu L (Liu Lei); Zhang XW (Zhang Xingwang); Wang XH (Wang Xiaohui); Wu JL (Wu Jinliang); Chai CL (Chai Chunlin) 收藏  |  浏览/下载:73/0  |  提交时间:2010/03/29
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| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method 期刊论文 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25 Qu BZ; Chen Z; Lu DC; Han P; Liu XG; Wang XH; Wang D; Zhu QS; Wang ZG 收藏  |  浏览/下载:39/0  |  提交时间:2010/08/12
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| Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er 期刊论文 journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 10-15 Chen CY; Chen WD; Song SF; Hsu CC 收藏  |  浏览/下载:441/2  |  提交时间:2010/08/12
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| Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文 journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77 作者: Li DB 收藏  |  浏览/下载:57/0  |  提交时间:2010/08/12
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| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308 作者: Xu B; Li CM; Jin P; Ye XL; Li DB 收藏  |  浏览/下载:97/0  |  提交时间:2010/08/12
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| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 188-194 Chen Z; Lu DH; Yuan HR; Han P; Liu XL; Li YF; Wang XH; Lu Y; Wang ZG 收藏  |  浏览/下载:102/11  |  提交时间:2010/08/12
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| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文 journal of crystal growth, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46 作者: Xu B; Ye XL 收藏  |  浏览/下载:79/2  |  提交时间:2010/08/12
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| Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368 Wang XD; Niu ZC; Feng SL; Miao ZH 收藏  |  浏览/下载:93/3  |  提交时间:2010/08/12
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