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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers 期刊论文 japanese journal of applied physics, 2010, 卷号: 49, 期号: 10, 页码: art. no. 100201 Wei TB (Wei Tongbo); Wang JX (Wang Junxi); Liu NX (Liu Naixin); Lu HX (Lu Hongxi); Zeng YP (Zeng Yiping); Wang GH (Wang Guohong); Li JM (Li Jinmin) 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/14 LOW-TEMPERATURE ACTIVATION  FILMS   Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏  |  浏览/下载：61/12  |  提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  FE-DOPED INP  POINT-DEFECTS  COMPENSATION  TEMPERATURE  DONORS  TRAPS   Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling 期刊论文 applied physics letters, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564 Lu, Y; Cong, GW; Liu, XL; Lu, DC; Wang, ZG; Wu, MF 收藏  |  浏览/下载：20/0  |  提交时间：2010/03/17 STRESS   Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文 journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841 Qu BZ; Zhu QS; Sun XH; Wan SK; Wang ZG; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N 收藏  |  浏览/下载：292/4  |  提交时间：2010/08/12 P-TYPE GAN  LIGHT-EMITTING-DIODES  LOCALIZED EXCITONS  GALLIUM NITRIDE  FILMS  DEFECTS  LUMINESCENCE  COMPENSATION  SPECTROSCOPY  ACCEPTORS   Electrical Transport Properties of Annealed Undoped InP 期刊论文 半导体学报, 2002, 卷号: 23, 期号: 1, 页码: 1-5 Zhao Youwen; Luo Yilin; Sun Niefeng; S Fung; Beling C D; Sun Tongnian; Lin Lanyin 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23