Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

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	Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling
	Lu, Y ; Cong, GW ; Liu, XL ; Lu, DC ; Wang, ZG ; Wu, MF
刊名	applied physics letters
	2004
卷号	85 期号:23 页码:5562-5564
关键词	STRESS
ISSN号	0003-6951
通讯作者	lu, y, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yuanlu@semi.ac.cn
中文摘要	the depth distribution of the strain-related tetragonal distortion e(t) in the gan epilayer with low-temperature aln interlayer (lt-aln il) on si(111) substrate is investigated by rutherford backscattering and channeling. the samples with the lt-aln il of 8 and 16 nm thickness are studied, which are also compared with the sample without the lt-aln il. for the sample with 16-nm-thick lt-aln il, it is found that there exists a step-down of e(t) of about 0.1% in the strain distribution. meanwhile, the angular scan around the normal gan <0001> axis shows a tilt difference about 0.01degrees between the two parts of gan separated by the lt-aln il, which means that these two gan layers are partially decoupled by the aln interlayer. however, for the sample with 8-nm-thick lt-aln il, neither step-down of e(t) nor the decoupling phenomenon is found. the 0.01degrees decoupled angle in the sample with 16-nm-thick lt-aln il confirms the relaxation of the lt-aln il. thus the step-down of e(t) should result from the compressive strain compensation brought by the relaxed aln interlayer. it is concluded that the strain compensation effect will occur only when the thickness of the lt-aln il is beyond a critical thickness. (c) 2004 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8934]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu, Y,Cong, GW,Liu, XL,et al. Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling[J]. applied physics letters,2004,85(23):5562-5564.
APA	Lu, Y,Cong, GW,Liu, XL,Lu, DC,Wang, ZG,&Wu, MF.(2004).Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling.applied physics letters,85(23),5562-5564.
MLA	Lu, Y,et al."Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling".applied physics letters 85.23(2004):5562-5564.