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CORC

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Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 971-974
作者:  Li DB
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17
Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate 期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959
作者:  Xu B
收藏  |  浏览/下载：73/0  |  提交时间：2010/08/12
Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors 期刊论文
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 147-152
Wu J; Lin F
收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Wang HM; Zeng YP; Zhou HW; Kong MY
收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12
Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices 期刊论文
journal of crystal growth, 1997, 卷号: 181, 期号: 3, 页码: 297-300
Pan D; Zeng YP; Wu J; Kong MY
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/17
INPLANE X-RAY-SCATTERING OF EPITAXIAL STRUCTURES 期刊论文
journal of crystal growth, 1995, 卷号: 152, 期号: 4, 页码: 354-358
CUI SF; WANG YT; ZHUANG Y; LI M; MAI ZH
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/17

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