Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors

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	Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors
	Wu J ; Lin F
刊名	defects and diffusion in semiconductors
	2000
卷号	183-1 期号:0 页码:147-152
关键词	In0.8Ga0.2As/InAlAs/InP misfit dislocations surface morphology GROWTH RELAXATION SUBSTRATE CIRCUITS
ISSN号	1012-0386
通讯作者	wu j,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	defects and morphologies are presented in this paper as revealed with transmission electron microscope (tem) in the in(0.8)g(0.2)as/inalas heterostructure on inp(001) for high-electron-mobility transistors application. most of the misfit dislocation lines are 60 degrees type and they deviate < 110 > at some angles to either side according to their burges vectors. the misfit dislocation lines deviating [-110] are divided into two types according to whether their edge component b(eg) of burges vectors in [001] pointing up or down. if b(eg) points up in the growth direction, there is the local periodical strain modulation along the dislocation line. in addition, the periodical modulation in height along [-110] on the in(0.8)g(0.2)as surface is observed, this surface morphology is not associated with the relaxation of mismatch strain.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12406]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu J,Lin F. Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors[J]. defects and diffusion in semiconductors,2000,183-1(0):147-152.
APA	Wu J,&Lin F.(2000).Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors.defects and diffusion in semiconductors,183-1(0),147-152.
MLA	Wu J,et al."Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors".defects and diffusion in semiconductors 183-1.0(2000):147-152.