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Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
作者:  Ye XL;  Jin P;  Xu B
收藏  |  浏览/下载:119/42  |  提交时间:2010/03/29
Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures 期刊论文
acta physica sinica, 2005, 卷号: 54, 期号: 11, 页码: 5367-5371
Xu ZC; Jia GZ; Sun L; Yao JH; Xu JJ
收藏  |  浏览/下载:73/20  |  提交时间:2010/03/17
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 501-505
作者:  Jiang DS
收藏  |  浏览/下载:147/24  |  提交时间:2010/08/12
Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers 期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 548-553
Wang SZ; Xie SW; Pang QJ; Zheng H; Xia YX; Ji RB; Wu Y; He L; Zhu ZM; Li GH; Wang ZP
收藏  |  浏览/下载:44/0  |  提交时间:2010/08/12
1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition 期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 1-2, 页码: 16-22
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
作者:  Xu B
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 期刊论文
journal of electronic materials, 1999, 卷号: 28, 期号: 5, 页码: 528-531
作者:  Xu B
收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 1-2, 页码: 70-76
作者:  Xu B
收藏  |  浏览/下载:31/0  |  提交时间:2010/08/12
Donor acceptor pair in molecular beam epitaxy grown GaN 期刊论文
materials science and engineering b-solid state materials for advanced technology, 1997, 卷号: 43, 期号: 0, 页码: 242-245
Ren GB; Dewsnip DJ; Lacklison DE; Orton JW; Cheng TS; Foxon CT
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/17
LUMINESCENCE-CENTERS IN POROUS SILICON 期刊论文
applied physics a-materials science & processing, 1995, 卷号: 60, 期号: 6, 页码: 601-606
CHEAH KW; HO LC; XIA JB; LI J; ZHENG WH; WANG QM
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/17


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