Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

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	Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
	Xu B
刊名	journal of electronic materials
	1999
卷号	28 期号:5 页码:528-531
关键词	bimodal distribution photoluminescence (PL) quantum-size effect ENSEMBLES SI(100) GROWTH SHAPE GE
ISSN号	0361-5235
通讯作者	zhou w,chinese acad sci,lab semicond mat sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	red-emission at similar to 640 nm from self-assembled in0.55al0.45as/al0.5ga0.5as quantum dots grown on gaas substrate by molecular beam epitaxy (mbe) has been demonstrated. we obtained a double-peak structure of photoluminescence (pl) spectra from quantum dots. an atomic force micrograph (afm) image for uncapped sample also shows a bimodal distribution of dot sizes. from the temperature and excitation intensity dependence of pl spectra, we found that the double-peak structure of pl spectra from quantum dots was strongly correlated to the two predominant quantum dot families. taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the afm image.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12914]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)[J]. journal of electronic materials,1999,28(5):528-531.
APA	Xu B.(1999).Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001).journal of electronic materials,28(5),528-531.
MLA	Xu B."Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)".journal of electronic materials 28.5(1999):528-531.