CORC

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CORC

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Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：212/46  |  提交时间：2010/10/11
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08
A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1654-1656
作者:  Zhang Yang;  Zhang Renping
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839
Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
2DEG  
Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959
Gao, HL (Gao Hong-Ling); Li, DL (Li Dong-Lin); Zhou, WZ (Zhou Wen-Zheng); Shang, LY (Shang Li-Yan); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping)
收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29
Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708
Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min)
收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.)
收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP
收藏  |  浏览/下载：119/30  |  提交时间：2010/03/29
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
作者:  Xiao Hongling;  Wang Cuimei
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23

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