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Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation 期刊论文
Journal of Applied Physics, 2017, 卷号: 121, 页码: 193901
作者:  X. L. Zeng;  J. L. Yu;  S. Y. Cheng;  Y. F. Lai, Y. H. Chen;  W. Huang
收藏  |  浏览/下载:36/0  |  提交时间:2018/05/23
Research on the band-gap of InN grown on siticon substrates 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM
收藏  |  浏览/下载:100/15  |  提交时间:2010/03/29
Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures 期刊论文
nanotechnology, 2005, 卷号: 16, 期号: 12, 页码: 2785-2789
作者:  Jin P;  Xu B
收藏  |  浏览/下载:53/0  |  提交时间:2010/04/11
High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array 期刊论文
physical review b, 2005, 卷号: 71, 期号: 8, 页码: art.no.085304
Ding, CR; Wang, HZ; Xu, B
收藏  |  浏览/下载:28/0  |  提交时间:2010/03/17
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate 期刊论文
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103
Xu HZ; Bell A; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT
收藏  |  浏览/下载:53/0  |  提交时间:2010/08/12
Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers 期刊论文
journal of crystal growth, 2000, 卷号: 210, 期号: 4, 页码: 451-457
作者:  Ye XL;  Xu B
收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
THE ADSORPTION OF O2 ON FESI SURFACES 期刊论文
surface science, 1992, 卷号: 269, 期号: 0, 页码: 1022-1031
HSU CC; DING SA; MA MS; WU JX; LIU XM; JI MR
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15


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