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Photorefractive effects in ZnO nanorod doped liquid crystal cell 期刊论文
applied optics, 2011, 卷号: 50, 期号: 8, 页码: 1101-1104
作者:  Guo YB
收藏  |  浏览/下载:71/7  |  提交时间:2011/07/05
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801
Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载:150/30  |  提交时间:2010/04/13
Effect of silver growth temperature on the contacts between Ag and ZnO thin films 期刊论文
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784
作者:  Li XK
收藏  |  浏览/下载:90/1  |  提交时间:2010/03/08
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM
收藏  |  浏览/下载:77/1  |  提交时间:2010/03/08
RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1116-1120
作者:  Liu Jian
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/23
Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates 期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 8, 页码: 1387-1390
Wang XL; Wang CM; Hu GX; Wang JX; Chen TS; Jiao G; Li JP; Zeng YP; Li JM
收藏  |  浏览/下载:94/18  |  提交时间:2010/03/17
HEMT  
Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 78-82
Ye ZZ; Ma DW; He JH; Huang JY; Zhao BH; Luo XD; Xu ZY
收藏  |  浏览/下载:487/1  |  提交时间:2010/08/12
The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 19-24
Chen Z; Lu DC; Han P; Liu XL; Wang XH; Li YF; Yuan HR; Lu Y; Bing LD; Zhu QS; Wang ZG; Wang XF; Yan L
收藏  |  浏览/下载:41/0  |  提交时间:2010/08/12
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 376-380
Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY
收藏  |  浏览/下载:81/5  |  提交时间:2010/08/12
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/15


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